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TS10P06G C2

TS10P06G C2

TS10P06G C2

Taiwan Semiconductor

Tube

SOT-23

TS10P06G C2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 800
Peak Average Forward Current (A) 10
Peak RMS Reverse Voltage (V) 560
Peak Non-Repetitive Forward Surge Current (A) 200
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 10
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
AEC Qualified No
Standard Package Name TS-6P
Supplier Package TS-6P
Military No
Mounting Through Hole
Package Height 20.3(Max)
Package Length 30.3(Max)
Package Width 4.8(Max)
PCB changed 4
Lead Shape Through Hole
PackagingTube
Part StatusActive
Pin Count4
Configuration Single
RoHS StatusYes with exemptions
In-Stock:4959 items

TS10P06G C2 Product Details

TS10P06G C2 Overview


Datasheets indicate 1.1 as the peak forward voltage.RF diode operates efficiently wRF diodeh a peak reverse voltage range of 560.

TS10P06G C2 Features


the forward peak voltage is 1.1
the peak RMS reverse voltage range of 560


TS10P06G C2 Applications


There are a lot of Taiwan Semiconductor
TS10P06G C2 applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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