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GBPC3506W T0

GBPC3506W T0

GBPC3506W T0

Taiwan Semiconductor

Tray

SOT-23

GBPC3506W T0 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 600
Peak Average Forward Current (A) 35
Peak RMS Reverse Voltage (V) 420
Peak Non-Repetitive Forward Surge Current (A) 400
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Standard Package Name Case GBPC-W
Supplier Package Case GBPC-W
Military No
Mounting Through Hole
Package Height 11.23(Max)
Package Length 29(Max)
Package Width 29(Max)
PCB changed 4
Lead Shape Through Hole
PackagingTray
Part StatusActive
Pin Count4
Configuration Single
RoHS StatusYes with exemptions
In-Stock:2373 items

GBPC3506W T0 Product Details

GBPC3506W T0 Overview


Datasheets indicate [email protected] as the peak forward voltage.RF diode operates efficiently wRF diodeh a peak reverse voltage range of 420.

GBPC3506W T0 Features


the forward peak voltage is [email protected]
the peak RMS reverse voltage range of 420


GBPC3506W T0 Applications


There are a lot of Taiwan Semiconductor
GBPC3506W T0 applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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