Name: STW7NK90Z
Brand: STMicroelectronics
SKU: STW7NK90Z
Price: 4.44000 USD
Availability: InStock

new-10%

STW7NK90Z

Manufacturer part number:STW7NK90Z

Manufacturer:STMicroelectronics

Description:STW7NK90Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW7NK90Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	2Ohm
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH VOLTAGE
Subcategory	FET General Purpose Power
Voltage - Rated DC	900V
Technology	MOSFET (Metal Oxide)
Current Rating	5.8A
Base Part Number	STW7N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.8A Tc
Gate Charge (Qg) (Max) @ Vgs	60.5nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2.9A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	900V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW7NK90Z Product Details

STW7NK90Z Description

The STW7NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH? technology, achieved through optimization of a well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.