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IXTY1R4N120PHV

IXTY1R4N120PHV

IXTY1R4N120PHV

IXYS

MOSFET N-CH

SOT-23

IXTY1R4N120PHV Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~150°C TJ
PackagingTube
Series Polar™
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 86W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 666pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:3801 items

Pricing & Ordering

QuantityUnit PriceExt. Price
70$2.25000$157.5

About IXTY1R4N120PHV

The IXTY1R4N120PHV from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTY1R4N120PHV, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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