STW34NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STW34NM60N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
105MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
225
Base Part Number
STW34N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
250W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
210W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
105m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2722pF @ 100V
Current - Continuous Drain (Id) @ 25°C
29A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
34ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
70 ns
Turn-Off Delay Time
106 ns
Continuous Drain Current (ID)
29A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
DS Breakdown Voltage-Min
600V
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:785 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.23000
$10.23
30
$8.50867
$255.2601
120
$7.74300
$929.16
510
$6.59459
$3363.2409
STW34NM60N Product Details
STW34NM60N Description
The STW34NM60N device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STW34NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
ROHS3 Compliant
No SVHC
Lead Free
STW34NM60N Applications
Switching applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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