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FDMS8670

FDMS8670

FDMS8670

ON Semiconductor

FDMS8670 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS8670 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta 78W Tc
Element ConfigurationSingle
Power Dissipation78W
Turn On Delay Time14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3940pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:8464 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.254869$0.254869
10$0.240443$2.40443
100$0.226833$22.6833
500$0.213993$106.9965
1000$0.201881$201.881

FDMS8670 Product Details

FDMS8670 Description


The N-channel MOSFET is manufactured using Fairchild's latest proprietary power groove process, which is tailor-made to minimize on-resistance. The device demonstrates the industry-leading switch FOM (RDS*Qgd) to improve the efficiency of DC-DC synchronous rectification.


FDMS8670 Features


Max rps(on)=2.6mΩat VGs=10Vlo=24A

Max rps(on)=3.8mΩat VGs=4.5V1p=18A

100% UIL Tested

RoHS Compliant

FDMS8670 Application


DC-DC Conversion


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