STW30NM60D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STW30NM60D Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
30A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW30N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Voltage
600V
Power Dissipation-Max
312W Tc
Element Configuration
Single
Current
34A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
312W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
145m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2520pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
115nC @ 10V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
35 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
30A
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.145Ohm
Drain to Source Breakdown Voltage
600V
Avalanche Energy Rating (Eas)
740 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1200 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$9.28750
$5572.5
STW30NM60D Product Details
STW30NM60D Description
STW30NM60D is 600v N-channel Fast diode MDmesh? Power MOSFET. The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, particularly ZVS phase-shift converters. The operating junction and storage temperature are between -55 and 150℃. The MOSFET STW30NM60D is in the TO-247 package with 312W power dissipation.
STW30NM60D Features
High dv/dt and avalanche capabilities
100% avalanche rated
Low input capacitance and gate charge
Low gate input resistance
Fast internal recovery diode
STW30NM60D Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
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