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IXTH12N100Q

IXTH12N100Q

IXTH12N100Q

IXYS

Trans MOSFET 1KV 12A 3-Pin(3+Tab) TO-247

SOT-23

IXTH12N100Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
PackagingTube
Published 2010
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation300W
Technology MOSFET (Metal Oxide)
Element ConfigurationSingle
Power Dissipation300W
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 12A Tc
Drain to Source Voltage (Vdss) 1000V
Continuous Drain Current (ID) 12A
Drain to Source Breakdown Voltage 1kV
Drain to Source Resistance 1.05Ohm
RoHS StatusROHS3 Compliant
In-Stock:3293 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.139120$5.13912
10$4.848226$48.48226
100$4.573799$457.3799
500$4.314904$2157.452
1000$4.070664$4070.664

About IXTH12N100Q

The IXTH12N100Q from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET 1KV 12A 3-Pin(3+Tab) TO-247.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTH12N100Q, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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