Name: IRF3205PBF
Brand: Infineon Technologies
SKU: IRF3205PBF
Price: 1.79000 USD
Availability: InStock

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IRF3205PBF

Manufacturer part number:IRF3205PBF

Manufacturer:Infineon Technologies

Description:IRF3205PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF3205PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	8mOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Current Rating	110A
Lead Pitch	2.54mm
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3247pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	146nC @ 10V
Rise Time	101ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	75A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Avalanche Energy Rating (Eas)	264 mJ
Recovery Time	104 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	19.8mm
Length	10.54mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRF3205PBF Product Details

IRF3205PBF Description

International Rectifier's advanced HEXFET power MOSFETIRF3205PBF uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. TO-220 packages are generally suitable for all commercial and industrial applications with a power consumption of about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost.