Name: STW160N75F3
Brand: STMicroelectronics
SKU: STW160N75F3
Availability: InStock

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STW160N75F3

Manufacturer part number:STW160N75F3

Manufacturer:STMicroelectronics

Description:STW160N75F3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW160N75F3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	4MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW160
Pin Count	3
Number of Elements	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330W
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Rise Time	65ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	480A
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW160N75F3 Product Details

STW160N75F3 Description

STW160N75F3 is a 75v N-channel STripFET? Power MOSFET. This N-channel enhancement mode Power MOSFET STW160N75F3 is the latest refinement of ST’s STripFET? process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics, and low gate charge. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STW160N75F3 is in the TO-247 package with 330W power dissipation.