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IRFS59N10DPBF

IRFS59N10DPBF

IRFS59N10DPBF

Infineon Technologies

MOSFET N-CH 100V 59A D2PAK

SOT-23

IRFS59N10DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 52 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2000
Series HEXFET®
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.8W Ta 200W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 35.4A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:3147 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$22.687058$22.687058
10$21.402885$214.02885
100$20.191401$2019.1401
500$19.048492$9524.246
1000$17.970274$17970.274

About IRFS59N10DPBF

The IRFS59N10DPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 59A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRFS59N10DPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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