Name: STW15N80K5
Brand: STMicroelectronics
SKU: STW15N80K5
Price: 5.98000 USD
Availability: InStock

new-10%

STW15N80K5

Manufacturer part number:STW15N80K5

Manufacturer:STMicroelectronics

Description:N-Channel Tube 375m Ω @ 7A, 10V ±30V 1100pF @ 100V 32nC @ 10V 800V TO-247-3

Case Package:SOT-23

Datasheet:STW15N80K5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH5™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Reach Compliance Code	not_compliant
Base Part Number	STW15N
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	375m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	56A
DS Breakdown Voltage-Min	800V
Height	20.15mm
Length	15.75mm
Width	5.15mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW15N80K5 Product Details

STW15N80K5 Description

STW15N80K5 is a very high voltage N-channel Power MOSFET designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. For applications needing a high power density and efficiency, the end result is a significantly reduced on-resistance and ultra-low gate charge.