Name: STW13NB60
Brand: STMicroelectronics
SKU: STW13NB60
Availability: InStock

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STW13NB60

Manufacturer part number:STW13NB60

Manufacturer:STMicroelectronics

Description:STW13NB60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW13NB60 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	13A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW13N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	540m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.54Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	52A
Avalanche Energy Rating (Eas)	700 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

STW13NB60 Product Details

STW13NB60 Description

The STP4NB100 is a PowerMESH? MOSFET designed by STMicroelectronics. Using the most recent high voltage MESH OVERLAY technology, STMicroelectronics has created an innovative family of power MOSFETs with remarkable performance. The unique patent-pending strip arrangement, when combined with the Company's proprietary edge termination structure, results in the lowest R_DS(on) per area, superior avalanche and dv/dt capabilities, and unrivalled gate charge and switching characteristics