IRF3709ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF3709ZPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
6.3MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
87A
Number of Elements
1
Power Dissipation-Max
79W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
79mW
Case Connection
DRAIN
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.3m Ω @ 21A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2130pF @ 15V
Current - Continuous Drain (Id) @ 25°C
87A Tc
Gate Charge (Qg) (Max) @ Vgs
26nC @ 4.5V
Rise Time
41ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4.7 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
87A
Threshold Voltage
2.25V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
42A
Drain to Source Breakdown Voltage
30V
Avalanche Energy Rating (Eas)
60 mJ
Recovery Time
24 ns
Nominal Vgs
20 V
Height
8.763mm
Length
10.5156mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1362 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.428260
$3.42826
10
$3.234208
$32.34208
100
$3.051139
$305.1139
500
$2.878434
$1439.217
1000
$2.715503
$2715.503
IRF3709ZPBF Product Details
IRF3709ZPBF Description
IRF3709ZPBF is a 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package. IRF3709ZPBF Especially as switching components in electronic control units and as power converters in contemporary electric vehicles, power MOSFETs are frequently utilized in automotive electronics.
IRF3709ZPBF Features
RoHS Compliant
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance
IRF3709ZPBF Applications
Power Factor Correction
Switch Mode Power Supplies
Electronic Lamp Ballasts
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