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STW11NK100Z

STW11NK100Z

STW11NK100Z

STMicroelectronics

STW11NK100Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STW11NK100Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 9.071847g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series SuperMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.38Ohm
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED, HIGH VOLTAGE
Subcategory FET General Purpose Power
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Current Rating8.3A
Base Part Number STW11N
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 230W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation230W
Turn On Delay Time27 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.38 Ω @ 4.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.3A Tc
Gate Charge (Qg) (Max) @ Vgs 162nC @ 10V
Rise Time18ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 8.3A
Threshold Voltage 3.75V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 1kV
Avalanche Energy Rating (Eas) 550 mJ
Max Junction Temperature (Tj) 150°C
Height 24.45mm
Length 15.75mm
Width 5.15mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1226 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.21000$7.21
30$5.87633$176.2899
120$5.39117$646.9404
510$4.44527$2267.0877

STW11NK100Z Product Details

STW11NK100Z Description


STW11NK100Z is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM configuration. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high voltage MOSFETs, including the groundbreaking MDmeshTM devices, is complemented by this series.



STW11NK100Z Features


Exceptional dv/dt capabilities

Avalanche safety is guaranteed.

Gate charge has been reduced.

Intrinsically low capacitances

Exceptional manufacturing consistency



STW11NK100Z Applications


Switching application


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