NDS331N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NDS331N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
160mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1.3A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
162pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.3A Ta
Gate Charge (Qg) (Max) @ Vgs
5nC @ 4.5V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
1.3A
Threshold Voltage
700mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
20V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
700 mV
Height
1.22mm
Length
2.92mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:13890 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.49000
$0.49
500
$0.4851
$242.55
1000
$0.4802
$480.2
1500
$0.4753
$712.95
2000
$0.4704
$940.8
2500
$0.4655
$1163.75
NDS331N Product Details
NDS331N Description
The NDS331N is a high-cell density, DMOS N-channel logic level enhancement mode Field-Effect Transistor. This ultra-high-density method was specifically designed to reduce on-state resistance. The NDS331N transistor is designed for low-voltage applications such as PCMCIA cards and other battery-powered circuits that require fast switching and low in-line power loss in a tiny shape surface mount package.
NDS331N Features
1.3 A, 20 V. RDS(ON) = 0.21 W @ VGS= 2.7 V
RDS(ON) = 0.16 W @ VGS= 4.5 V.
Industry-standard outline SOT-23 surface-mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
NDS331N Applications
Power Management
Computers & Computer Peripherals
Notebook computers
Portable phones
PCMCIA cards
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