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STS1HNK60

STS1HNK60

STS1HNK60

STMicroelectronics

STS1HNK60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STS1HNK60 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Series SuperMESH™
JESD-609 Code e4
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating300mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STS1
Pin Count8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.3A
Drain to Source Breakdown Voltage 600V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:4724 items

Pricing & Ordering

QuantityUnit PriceExt. Price

STS1HNK60 Product Details

STS1HNK60 Description


Produced by STMicroelectronics is STS1HNK60. It falls within the category of electronic components, ICs. It is used in a variety of industries, including projectors, enterprise systems, industrial appliances, and wireless infrastructure. And the primary criteria for this component are: 8-PIN SOIC Trans Mosfet N-ch 600V 0.3A It is also environmentally friendly and RoHS compliant (lead free).



STS1HNK60 Features


  • TYPICAL RDS(on) = 8 ?

  • 100% AVALANCHE TESTED

  • GATE CHARGE MINIMIZED

  • NEW HIGH VOLTAGE BENCHMARK

  • EXTREMELY HIGH dv/dt CAPABILITY



STS1HNK60 Applications


  • Industrial

  • Enterprise systems

  • Communications equipment


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