IRFH7185TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFH7185TRPBF Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
FASTIRFET™, HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Base Part Number
IRFH7185
JESD-30 Code
R-PDSO-N5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.6W Ta 160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.6W
Case Connection
DRAIN
Turn On Delay Time
6.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
3.6V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
2320pF @ 50V
Current - Continuous Drain (Id) @ 25°C
19A Ta
Gate Charge (Qg) (Max) @ Vgs
54nC @ 10V
Rise Time
9.9ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
3.9 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
19A
Threshold Voltage
3.6V
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0052Ohm
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
260A
Avalanche Energy Rating (Eas)
360 mJ
Max Junction Temperature (Tj)
150°C
Height
950μm
Length
6.15mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:2522 items
IRFH7185TRPBF Product Details
IRFH7185TRPBF Description
Advanced processing techniques are used in Infineon's IR MOSFETTM technology to provide ultra-low on-resistance per silicon area. When the rapid switching speed and reliable device architecture of IR MOSFETTM devices are combined, the result is a highly efficient and reliable device that may be employed in a variety of applications.
IRFH7185TRPBF Features
Lower Losses in Conduction
Increased Density of Power
Boosted Reliability
Increased Density of Power
Compatibility with Multiple Vendors
Manufacturing is simpler.
Environmentally preferable
Enhanced Reliability
IRFH7185TRPBF Applications
Primary Switch for Telecom DC-DC Power Supplies with a High Frequency of 48V/60V
Synchronous Rectifier on the Secondary Side
Active O-Ring and Hot Swap
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