Name: CSD25484F4
Brand: Texas Instruments
SKU: CSD25484F4
Price: 0.40000 USD
Availability: InStock

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CSD25484F4

Manufacturer part number:CSD25484F4

Manufacturer:Texas Instruments

Description:CSD25484F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD25484F4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	FemtoFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Base Part Number	CSD25484
Pin Count	3
Number of Elements	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9.5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	94m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	1.42nC @ 4.5V
Rise Time	5ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 8V
Vgs (Max)	-12V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	2.5A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.18Ohm
DS Breakdown Voltage-Min	20V
Feedback Cap-Max (Crss)	7.2 pF
Length	1.035mm
Width	635μm
Thickness	200μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

CSD25484F4 Product Details

CSD25484F4 Description

CSD25484F4 is a kind of 90-mΩ, 20-V P-Channel FemtoFET? MOSFET providing ultralow on-state resistance and ultralow Qg and Qgd. Based on innovative technology, it is developed and optimized to minimize the footprint in many handheld and mobile applications. It provides an alternative to standard small signal MOSFETs.