Name: STP9NK60ZFP
Brand: STMicroelectronics
SKU: STP9NK60ZFP
Price: 1.71000 USD
Availability: InStock

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STP9NK60ZFP

Manufacturer part number:STP9NK60ZFP

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 950m Ω @ 3.5A, 10V ±30V 1110pF @ 25V 53nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STP9NK60ZFP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	245
Base Part Number	STP9N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	ISOLATED
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	950m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	53nC @ 10V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	7A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.95Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	28A
Height	16.4mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

STP9NK60ZFP Product Details

STP9NK60ZFP Description

The STP9NK60ZFP is an N-channel Zener-protected Power MOSFET designed with STMicroelectronics' SuperMESHTM technology, which was obtained by optimizing ST's well-known strip-based PowerMESHTM layout. STP9NK60ZFP MOSFETs are developed to ensure a high degree of dv/dt capability for the most demanding applications and a significant reduction in on-resistance.