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BUK7E3R1-40E,127

BUK7E3R1-40E,127

BUK7E3R1-40E,127

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 3.1m Ω @ 25A, 10V ±20V 6200pF @ 25V 79nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

SOT-23

BUK7E3R1-40E,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface MountNO
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series Automotive, AEC-Q101, TrenchMOS™
Published 2012
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 234W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 79nC @ 10V
Rise Time29ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage40V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 798A
RoHS StatusROHS3 Compliant
In-Stock:11544 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.09000$2.09
50$1.68720$84.36
100$1.51840$151.84
500$1.18098$590.49

BUK7E3R1-40E,127 Product Details

BUK7E3R1-40E,127 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 54 ns.Peak drain current is 798A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 40V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

BUK7E3R1-40E,127 Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 798A.


BUK7E3R1-40E,127 Applications


There are a lot of Nexperia USA Inc.
BUK7E3R1-40E,127 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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