Name: STP85NF55
Brand: STMicroelectronics
SKU: STP85NF55
Price: 3.79000 USD
Availability: InStock

new-10%

STP85NF55

Manufacturer part number:STP85NF55

Manufacturer:STMicroelectronics

Description:N-Channel Tube 8m Ω @ 40A, 10V ±20V 3700pF @ 25V 150nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP85NF55 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	9.071847g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	8mOhm
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	55V
Current Rating	80A
Base Part Number	STP85N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	980 mJ
Height	6.35mm
Length	38.1mm
Width	12.7mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP85NF55 Product Details

STP85NF55 Description

These Power MOSFETs were created utilizing the exclusive STripFET technology from STMicroelectronics, which is intended to reduce gate charge and input capacitance. As a result, the devices can be used as the principal switch in cutting-edge, isolated DC-DC converters for computer and telecom applications as well as applications requiring less gate charge driving.