STD18N55M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD18N55M5 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ V
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
180mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Base Part Number
STD18
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
192m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1260pF @ 100V
Current - Continuous Drain (Id) @ 25°C
16A Tc
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Rise Time
9.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
29 ns
Continuous Drain Current (ID)
13A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
9A
Drain to Source Breakdown Voltage
550V
Pulsed Drain Current-Max (IDM)
56A
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2142 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.157859
$1.157859
10
$1.092320
$10.9232
100
$1.030491
$103.0491
500
$0.972161
$486.0805
1000
$0.917133
$917.133
STD18N55M5 Product Details
STD18N55M5 Description
The STD18N55M5 is an N-channel Power MOSFET based on the MDmesh? M5 innovative vertical process technology combined with the well-known PowerMESH? horizontal layout.
STD18N55M5 Features
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
STD18N55M5 Applications
Switching applications
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