Name: STP80NF06
Brand: STMicroelectronics
SKU: STP80NF06
Price: 3.52000 USD
Availability: InStock

new-10%

STP80NF06

Manufacturer part number:STP80NF06

Manufacturer:STMicroelectronics

Description:N-Channel Tube 8m Ω @ 40A, 10V ±20V 3850pF @ 25V 150nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP80NF06 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	8mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Voltage - Rated DC	60V
Current Rating	80A
Base Part Number	STP80N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3850pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	85ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	870 mJ
Height	9.15mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP80NF06 Product Details

Description

The STP80NF06 is an N-channel 60V - 0.0065? - 80A TO-220/D2PAK/TO-247 STripFET II? Power MOSFET. The "Single Feature Size?" strip-based technique used by STMicroelectronics to create this Power MOSFET is its most recent innovation. The resultant transistor exhibits remarkable manufacturing repeatability, robust avalanche properties, and extraordinarily high packing density for low on-resistance.