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FCH072N60F

FCH072N60F

FCH072N60F

ON Semiconductor

FCH072N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FCH072N60F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2013
Series FRFET®, SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 481W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation481W
Turn On Delay Time43 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8660pF @ 100V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Rise Time38ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 52A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.072Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 156A
Avalanche Energy Rating (Eas) 1128 mJ
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:926 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.29000$7.29
10$6.53200$65.32
450$4.88729$2199.2805
900$4.00182$3601.638

FCH072N60F Product Details

Description


The FCH072N60F is an 600 V, 52 A, 72 mΩ N-Channel SuperFET? II FRFET? MOSFET. Fairchild Semiconductor's SuperFET? II MOSFET of FCH072N60F is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, the SuperFET II MOSFET is well suited for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFETII FRFET? MOSFETs can eliminate unnecessary components and improve system reliability.



Features


? Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF)

? 100% Avalanche Tested

? RoHS Compliant

? 650 V @ TJ = 150°C

? Typ. RDS(on) = 65 mΩ

? Ultra Low Gate Charge (Typ. Qg = 165 nC)



Applications


? Switching Applications

? Automotive Electronics

? As Power Converters

? Accelerometer

? Amplifiers


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