Name: STP7NB60
Brand: STMicroelectronics
SKU: STP7NB60
Availability: InStock

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STP7NB60

Manufacturer part number:STP7NB60

Manufacturer:STMicroelectronics

Description:STP7NB60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP7NB60 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	7.2A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1625pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.2A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	5 ns
Continuous Drain Current (ID)	7.2A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	28.8A
Avalanche Energy Rating (Eas)	580 mJ
Feedback Cap-Max (Crss)	21 pF
Turn On Time-Max (ton)	39ns
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

STP7NB60 Product Details

STP7NB60 Description

The STP7NB60 is a PowerMESH? MOSFET designed by STMicroelectronics. Using the most recent high voltage MESH OVERLAY technology, STMicroelectronics has created an innovative family of power MOSFETs with remarkable performance. The unique patent-pending strip arrangement, when combined with the Company's proprietary edge termination structure, results in the lowest R_DS(on) per area, superior avalanche and dv/dt capabilities, and unrivalled gate charge and switching characteristics.