Name: STW11NB80
Brand: STMicroelectronics
SKU: STW11NB80
Availability: InStock

new-10%

STW11NB80

Manufacturer part number:STW11NB80

Manufacturer:STMicroelectronics

Description:STW11NB80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW11NB80 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	11A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW11N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	23 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	44A
Avalanche Energy Rating (Eas)	500 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

STW11NB80 Product Details

STW11NB80 Description

The STMicroelectronics STW11NB80 MOSFET has used the latest high voltage MESH OVERLAY^TM process, SGS-Thomson which has designed an advanced family of power MOSFETs with outstanding performances. The new patent-pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.