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STP6NB90

STP6NB90

STP6NB90

STMicroelectronics

STP6NB90 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP6NB90 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureHIGH VOLTAGE
Subcategory FET General Purpose Power
Voltage - Rated DC 900V
Technology MOSFET (Metal Oxide)
Current Rating5.8A
Base Part Number STP6N
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 135W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation135W
Turn On Delay Time20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.8A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 5.8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 2Ohm
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 23A
Avalanche Energy Rating (Eas) 250 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1219 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$1.91730$958.65

STP6NB90 Product Details

STP6NB90 Description


The STMicroelectronics STP6NB90 MOSFET has used the latest high voltage MESH OVERLAYTM process, SGS-Thomson which has designed an advanced family of power MOSFETs with outstanding performances. The new patent-pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.



STP6NB90 Features


  • Typical RDS(ON)=1.7Ω

  • Extremely high dv/dt capability

  • ± 30V Gate to the source voltage rating

  • 100% avalanche tested

  • Gate charge minimized



STP6NB90 Applications


  • High current, high-speed switching

  • Switch-mode power supplies (SMPS)

  • DC-AC converters for welding

  • Equipment and uninterruptible power supplies and motor drive


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