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RJK0629DPE-00#J3

RJK0629DPE-00#J3

RJK0629DPE-00#J3

Renesas Electronics America

MOSFET N-CH 60V 85A LDPAK

SOT-23

RJK0629DPE-00#J3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-83
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
Power Dissipation-Max 100W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 43A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 10V
Current - Continuous Drain (Id) @ 25°C 85A Ta
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 85A
RoHS StatusROHS3 Compliant
In-Stock:2612 items

About RJK0629DPE-00#J3

The RJK0629DPE-00#J3 from Renesas Electronics America is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 85A LDPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RJK0629DPE-00#J3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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