Name: STP62NS04Z
Brand: STMicroelectronics
SKU: STP62NS04Z
Price: 2.47000 USD
Availability: InStock

new-10%

STP62NS04Z

Manufacturer part number:STP62NS04Z

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 15m Ω @ 30A, 10V Clamped 1330pF @ 25V 47nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP62NS04Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	0015988_Rev_R
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	MESH OVERLAY™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	15MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Current Rating	62A
Base Part Number	STP62N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	62A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	104ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	Clamped
Fall Time (Typ)	42 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	62A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	18V
Drain Current-Max (Abs) (ID)	40A
Drain to Source Breakdown Voltage	33V
Pulsed Drain Current-Max (IDM)	248A
Avalanche Energy Rating (Eas)	500 mJ
Height	15.75mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP62NS04Z Product Details

STP62NS04Z Description

The STP62NS04Z is a N-channel clamped fully protected Power MOSFET produced by using most advanced MESH OVERLAY? process based on strip layout. The inherent benefits of this new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operating conditions such as those encountered in the automotive environment. It is also recommended for any other application requiring extra ruggedness.