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STU3N45K3

STU3N45K3

STU3N45K3

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 3.8 Ω @ 500mA, 10V ±30V 150pF @ 25V 6nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

SOT-23

STU3N45K3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
PackagingTube
Series SuperMESH3™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STU3N
Pin Count3
Number of Elements 1
Power Dissipation-Max 27W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation27W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 1.8A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 450V
Pulsed Drain Current-Max (IDM) 7.2A
Height 6.9mm
Length 6.6mm
Width 2.4mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14106 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.97000$0.97
75$0.75027$56.27025
150$0.65340$98.01
525$0.48400$254.1

STU3N45K3 Product Details

STU3N45K3 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 150pF @ 25V.This device has a continuous drain current (ID) of [1.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=450V, the drain-source breakdown voltage is 450V.A maximum pulsed drain current of 7.2A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3.75V.Its overall power consumption can be reduced by using drive voltage (10V).

STU3N45K3 Features


a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of 450V voltage
based on its rated peak drain current 7.2A.
a threshold voltage of 3.75V


STU3N45K3 Applications


There are a lot of STMicroelectronics
STU3N45K3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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