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STP60N55F3

STP60N55F3

STP60N55F3

STMicroelectronics

STP60N55F3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

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STP60N55F3 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series STripFET™ III
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 8.5MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP60N
Pin Count3
Number of Elements 1
Power Dissipation-Max 110W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation110W
Case Connection DRAIN
Turn On Delay Time20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.5 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3428 items

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STP60N55F3 Product Details

STP180N55F3 Description


STP180N55F3 is a 55v N-channel STripFET? Power MOSFET. The n-channel enhancement mode Power MOSFET STP180N55F3 is the latest refinement of STMicroelectronics unique “single feature size?”strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics, and low gate charge. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STP180N55F3 is in the TO-220 package with 330W power dissipation.



STP180N55F3 Features


  • Ultra-low on-resistance

  • 100% avalanche tested

  • Drain-source voltage (VGS=0):55V

  • Gate-source voltage: ±20V

  • Drain current (continuous) at TC = 25°C: 120A



STP180N55F3 Applications


  • Rotary Switch

  • DIP Switch

  • Limit Switch

  • Reed Switch

  • Rocker Switch

  • Toggle Switch


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