STP50NE08 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STP50NE08 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN
Subcategory
FET General Purpose Power
Voltage - Rated DC
80V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
50A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP50N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
24m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
95ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
30 ns
Continuous Drain Current (ID)
50A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.024Ohm
Drain to Source Breakdown Voltage
80V
Pulsed Drain Current-Max (IDM)
200A
Avalanche Energy Rating (Eas)
300 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
In-Stock:4216 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STP50NE08 Product Details
STP50NE08 Description
The STP50NE08 Power MOSFET is the latest development of SGS-THOMSON's unique "Single Feature Size?"strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP50NE08 Features
Typical RDS(ON)=0.020Ω
Exceptional dv/dt capabilities
100% avalanche tested
Low gate charge at 100℃
Application-oriented characterization
STP50NE08 Applications
High current, high-speed switching
Solenoid and relay drivers
Motor control, Audio Amplifiers
DC-DC & DC-AC Converters
Automotive environment (Injection, ABS, Air BAG, Lampdrivers, etc)
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