Name: IRF6629TRPBF
Brand: Infineon Technologies
SKU: IRF6629TRPBF
Availability: InStock

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IRF6629TRPBF

Manufacturer part number:IRF6629TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 29A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6629TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	FET General Purpose Power
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Current Rating	29A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 100W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.1m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	4260pF @ 13V
Current - Continuous Drain (Id) @ 25°C	29A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 4.5V
Rise Time	67ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.4 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	23A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	180A
Drain-source On Resistance-Max	0.0021Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	230A
Avalanche Energy Rating (Eas)	1170 mJ
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

About IRF6629TRPBF

The IRF6629TRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 25V 29A DIRECTFET.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6629TRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.