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STP4NK50ZFP

STP4NK50ZFP

STP4NK50ZFP

STMicroelectronics

STP4NK50ZFP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP4NK50ZFP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series SuperMESH™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP4N
Pin Count3
Number of Elements 1
Power Dissipation-Max 20W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation20W
Case Connection ISOLATED
Turn On Delay Time10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 500V
Nominal Vgs 3.75 V
Height 16.4mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:2637 items

Pricing & Ordering

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STP4NK50ZFP Product Details

STP4NK50ZFP Description


The STP4NK50ZFP high-voltage device is Zener-protected N-channel Power MOSFET developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, the STP4NK50ZFP device is designed to ensure a high level of dv/dt capability for the most demanding applications.



STP4NK50ZFP Features


  • Extremely high dv/dt capability

  • 100% avalanche tested

  • Gate charge minimized

  • Very low intrinsic capacitance

  • Zener-protected

  • ROHS3 Compliant

  • No SVHC



STP4NK50ZFP Applications


  • Switching applications

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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