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STP27N3LH5

STP27N3LH5

STP27N3LH5

STMicroelectronics

STP27N3LH5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP27N3LH5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series STripFET™ V
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 20mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP27N
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 45W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation30W
Case Connection DRAIN
Turn On Delay Time4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 5V
Rise Time22ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±22V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 27A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 22V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 50 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1648 items

STP27N3LH5 Product Details

STP27N3LH5 N-Channel MOSFET Description


The STP27N3LH5 is one of the first 650 V automotive powerMOSFETs in TO-247, and it's suited for hard-switching and high-current topologies. This STripFETTMV Power MOSFET technology is one of the most recent advancements, which has been specifically engineered to provide extremely low on-state resistance while simultaneously giving one of the finest figures of merit in the industry (FOM).



STP27N3LH5 N-Channel MOSFET Features


100% avalanche tested

Standard threshold drive

Low gate drive power losses

High avalanche ruggedness

Very low switching gate charge

Extremely low on-resistance RDS(on)

RDS(on)* Qgindustry benchmark



STP27N3LH5 N-Channel MOSFET Applications


Wheelchair

Buck Converters

VRM Applications

IAR AND EAS Parameters

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