IRF6644TR1PBF Description
The IRF6644PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile. The DirectFET? package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET? package allows dual sided cooling to maximize thermal transfer in power systems improving previous best thermal resistance by 80%.
IRF6644TR1PBF Applications
RoHS Compliant
Lead-Free (Qualified up to 260??C Reflow)
Application Specifies MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Low Profile (< 0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
