Name: STP260N6F6
Brand: STMicroelectronics
SKU: STP260N6F6
Availability: InStock

new-10%

STP260N6F6

Manufacturer part number:STP260N6F6

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 3m Ω @ 60A, 10V ±20V 11400pF @ 25V 183nC @ 10V 60V TO-220-3

Case Package:SOT-23

Datasheet:STP260N6F6 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	DeepGATE™, STripFET™ VI
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	3MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP260
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	31.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	183nC @ 10V
Rise Time	165ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	62.6 ns
Turn-Off Delay Time	144.4 ns
Continuous Drain Current (ID)	120A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	480A
Height	15.75mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP260N6F6 Product Details

STP260N6F6 Description

STP260N6F6 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 60V. The operating temperature of the STP260N6F6 is -55°C~175°C TJ and its maximum power dissipation is 300W Tc. These products are N-channel Power MOSFETs made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFETs that are produced have the lowest RDS(on) among all packages.