STP20NF06 Description
This power MOS FET is the latest development of St's only "single feature size" strip process.The transistor shows extremely high packing density, which can achieve low on-resistance and durable avalanche.
Characteristics and less critical alignment steps, so it has significant manufacturing reproducibility.
STP20NF06 Features
Refer to soa for the max allowable curent value on FP-type due to Rth value
Avalanche rugged technology
100%avalanche tested
175°℃ operating temperature
High dv/dt capability
Application oriented characterization
STP20NF06 Application
Switching applications