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NTD2955G

NTD2955G

NTD2955G

ON Semiconductor

NTD2955G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD2955G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 155MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Current Rating-12A
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 55W Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation55W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time45ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 12A
Threshold Voltage -2.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Nominal Vgs -2.8 V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1424 items

NTD2955G Product Details

Description


The NTD2955G is a MOSFET ¨C Power, P-Channel, DPAK-60 V, -12 A. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. Power supplies, converters, and power motor control all use low-voltage, high-speed switching. These devices provide an additional safety margin against unexpected voltage transients and are particularly well suited for bridge circuits where diode speed and commutating safe working zones are crucial.



Features


  • NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • These Devices are Pb?Free and are RoHS Compliant

  • Avalanche Energy Specified

  • IDSS and VDS(on) Specified at Elevated Temperature

  • Designed for Low?Voltage, High?Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes



Applications


  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications

  • Switch, buck and synchronous rectification

  • Uninterruptible Power Supplies (UPS)

  • Small motor control


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