Name: STP20NE06L
Brand: STMicroelectronics
SKU: STP20NE06L
Availability: InStock

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STP20NE06L

Manufacturer part number:STP20NE06L

Manufacturer:STMicroelectronics

Description:STP20NE06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP20NE06L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
Series	STripFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STP20N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.085Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	100 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

STP20NE06L Product Details

STP20NE06L Description

The STP20NE06L Power MOSFET from STMicroelectronics is the next evolution of the company's distinctive "single feature size"^TM strip-based technology. The resultant transistor has remarkable manufacturing reproducibility because of its extremely high packing density for low on-resistance, tough avalanche properties, and less essential alignment stages.