Name: MTP2P50EG
Brand: ON Semiconductor
SKU: MTP2P50EG
Availability: InStock

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MTP2P50EG

Manufacturer part number:MTP2P50EG

Manufacturer:ON Semiconductor

Description:MTP2P50EG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTP2P50EG Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	6Ohm
Terminal Finish	Tin (Sn)
Additional Feature	HIGH VOLTAGE
Subcategory	Other Transistors
Voltage - Rated DC	-500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	-2A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	75W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	75W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1183pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	2A
Threshold Voltage	-3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	6A
Avalanche Energy Rating (Eas)	80 mJ
Nominal Vgs	3 V
Height	9.28mm
Length	10.28mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

MTP2P50EG Product Details

MTP2P50EG Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage?blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy-efficient design also offers a drain?to?source diode with a fast recovery time. Designed for high voltage, high-speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.