STP16NF06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STP16NF06L Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
90mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
16A
Base Part Number
STP16N
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
345pF @ 25V
Current - Continuous Drain (Id) @ 25°C
16A Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 5V
Rise Time
37ns
Drive Voltage (Max Rds On,Min Rds On)
10V 5V
Vgs (Max)
±16V
Fall Time (Typ)
12.5 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
16A
Threshold Voltage
1V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
64A
Height
9.15mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:6158 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.04000
$1.04
50
$0.83340
$41.67
100
$0.72930
$72.93
500
$0.56556
$282.78
STP16NF06L Product Details
STP16NF06L Description
STP16NF06L power MOSFET is the most recent technology to develop a unique strip-based process. The resultant transistor exhibits an extremely high density of packing for low on-resistance, robust Avalanche characteristics, and less important alignment, resulting in a reproducibility in manufacturing.
STP16NF06L Features
TYPICAL RDS(on) = 0.07 LOW GATE CHARGE AT 100 °C EXCEPTIONAL dv/dt CAPABILITY LOW THRESHOLD DRIVE
STP16NF06L Applications
MOTOR CONTROL, AUDIO AMPLIFIERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
Related Products
Similar Transistors - FETs, MOSFETs - Single from STMicroelectronics and other manufacturers
