STP4N150 Description
STMicroelectronics has developed advanced STP4N150 Power MOSFETs, based on its well-established high voltage MESH OVERLAY* process, which provides outstanding performance. With the enhanced layout and the company's proprietary edge termination structure, the company is able to achieve the lowest RDS(on) per area, as well as the highest gate charge and switching performance.
STP4N150 Features
1500V, 4A N-channel PowerMESH? power MOSFET in 3 pins TO-220 package
100% avalanche tested
Intrinsic capacitances and Qg minimized
High-speed switching
Strengthened layout with an edge termination
Lowest RDS(on) per area, unrivaled gate charge, switching characteristics
Suitable for switching applications
Designed using the well consolidated high voltage MESH OVERLAY? process
STP4N150 Applications
General-Purpose Amplifier
Switch
Darlington Pair Designs
Motor speed control
Driver Modules like Relay Driver, LED driver, etc...
Inverter and Rectifier circuits
