Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IXTP1N120P

IXTP1N120P

IXTP1N120P

IXYS

MOSFET N-CH 1200V 1A TO-220

SOT-23

IXTP1N120P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2007
Series PolarVHV™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 63W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation63W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Gate Charge (Qg) (Max) @ Vgs 17.6nC @ 10V
Rise Time28ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 1.8A
Avalanche Energy Rating (Eas) 100 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2101 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$23.402036$23.402036
10$22.077392$220.77392
100$20.827729$2082.7729
500$19.648800$9824.4
1000$18.536604$18536.604

About IXTP1N120P

The IXTP1N120P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 1200V 1A TO-220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTP1N120P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News