STP11NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STP11NM60ND Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
FDmesh™ II
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
450mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP11N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
90W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
450m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 50V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
40A
Avalanche Energy Rating (Eas)
200 mJ
Height
15.75mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1561 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.88000
$3.88
50
$3.11860
$155.93
100
$2.84130
$284.13
500
$2.30076
$1150.38
STP11NM60ND Product Details
STP11NM60ND Description
STP11NM60ND, in a family of superjunction FDmesh Ⅱ, is a 600V N-channel MOSFET transistor. The new FDmesh superjunction architecture incorporates a vertical structure within a conventional strip MOSFET structure, while also incorporating a faster and more reliable intrinsic body diode. In addition to reducing on-resistance and recovery time, these technical improvements can further improve switching efficiency and reduce drive losses by reducing gate capacitance, gate charge, and gate input resistance. Improved reliability during switching, especially in bridge topologies, including zero-voltage switching (ZVS) structures at low loads, enables new products with high dv/dt values.
STP11NM60ND Features
Fast switching Very low on-resistance 100% avalanche tested Higher thermal management efficiency More package options and current performance
![SI2356DS-T1-GE3 - MOSFET 40V [email protected] 4.3A N-Ch T-FET](http://img.hotenda.com/thumb/1192368/si2356ds-t1-ge3.jpg)
