Name: STP11NK50Z
Brand: STMicroelectronics
SKU: STP11NK50Z
Price: 3.25000 USD
Availability: InStock

new-10%

STP11NK50Z

Manufacturer part number:STP11NK50Z

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 520m Ω @ 4.5A, 10V ±30V 1390pF @ 25V 68nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP11NK50Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	10A
Base Part Number	STP11N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Turn On Delay Time	14.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	520m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1390pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.52Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	40A
Height	9.15mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP11NK50Z Product Details

Description

The STP11NK50Z is an N-channel 500 V, 0.48 ?, 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESH? Power MOSFET. The well-known strip-based PowerMESH? layout of ST is greatly optimized to produce the SuperMESH? series. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications.