Name: STP36N55M5
Brand: STMicroelectronics
SKU: STP36N55M5
Price: 7.23000 USD
Availability: InStock

new-10%

STP36N55M5

Manufacturer part number:STP36N55M5

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 16.5A, 10V ±25V 2670pF @ 100V 62nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP36N55M5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP36N
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
Case Connection	DRAIN
Turn On Delay Time	56 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2670pF @ 100V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	33A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.08Ohm
Drain to Source Breakdown Voltage	550V
Height	15.75mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP36N55M5 Product Details

STP36N55M5 Description

STP36N55M5 N-channel MOSFET is based on an original, unique vertical structure. STP36N55M5 MOSFET results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STP36N55M5 STMicroelectronics is utilized in Switching applications.