STN1NK60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STN1NK60Z Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
15Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
250mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STN1N
Pin Count
4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.3W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.3W
Case Connection
DRAIN
Turn On Delay Time
5.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15 Ω @ 400mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
94pF @ 25V
Current - Continuous Drain (Id) @ 25°C
300mA Tc
Gate Charge (Qg) (Max) @ Vgs
6.9nC @ 10V
Rise Time
5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
300mA
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
0.25A
Drain to Source Breakdown Voltage
600V
Max Junction Temperature (Tj)
150°C
Height
1.9mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:8956 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.447306
$0.447306
10
$0.421987
$4.21987
100
$0.398101
$39.8101
500
$0.375567
$187.7835
1000
$0.354308
$354.308
STN1NK60Z Product Details
STN1NK60Z Applications
? Switching applications
All features 100% avalanche tested Extremely high dv/dt capability Gate charge minimized ESD improved capability Zener-protected
STN1NK60Z Discription
STN1NK60Z is a N-channel Zener protection power MOSFET developed by STMicroelectronics SuperMESH semiconductor technology, and are realized by optimizing the layout of the mature ribbon power grid gate of STMicroelectronics.
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