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IXTT16N20D2

IXTT16N20D2

IXTT16N20D2

IXYS

MOSFET (Metal Oxide) N-Channel Tube 73m Ω @ 8A, 0V ±20V 5500pF @ 25V 208nC @ 5V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

SOT-23

IXTT16N20D2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 695W Tc
Element ConfigurationSingle
Power Dissipation695W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 73m Ω @ 8A, 0V
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 208nC @ 5V
Rise Time130ns
Vgs (Max) ±20V
Fall Time (Typ) 135 ns
Turn-Off Delay Time 270 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.073Ohm
Drain to Source Breakdown Voltage 200V
FET Feature Depletion Mode
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:514 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.92000$10.92
10$9.82800$98.28
30$8.95433$268.6299
120$8.08083$969.6996
270$7.42559$2004.9093
510$6.77039$3452.8989

IXTT16N20D2 Product Details

IXTT16N20D2 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [270 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.

IXTT16N20D2 Features


a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 270 ns


IXTT16N20D2 Applications


There are a lot of IXYS
IXTT16N20D2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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